MIC5060
Ultra-Small High-Side MOSFET Driver
Features
General Description
•
•
•
•
•
•
•
•
•
•
•
•
The MIC5060 MOSFET driver is designed for gate
control of N-Channel, enhancement-mode, and power
MOSFETs used as high-side or low-side switches. The
MIC5060 can sustain an on-state output indefinitely.
2.75V to 30V Operation
100 µA Maximum Supply Current (5V supply)
15 µA Typical Off-State Current
Internal Charge Pump
TTL Compatible Input
Withstands 60V Transient (Load Dump)
Reverse Battery Protected To –20V
Inductive Spike Protected To –20V
Overvoltage Shutdown at 35V
Internal 15V Gate Protection
Minimum External Parts
Operates in High-Side or Low-Side
Configurations
• 1 µA Control Input Pull-Off
• Available in 8-Lead 3 mm x 3 mm VDFN Package
The MIC5060 operates from a 2.75V to 30V supply. In
high-side configurations, the driver can control
MOSFETs that switch loads of up to 30V. In low-side
configurations, with separate supplies, the maximum
switched voltage is limited only by the MOSFET.
The MIC5060 has a non-inverting, TTL-compatible
control input.
The MIC5060 features an internal charge pump that
can sustain a gate voltage greater than the available
supply voltage. The driver is capable of turning on a
logic-level MOSFET from a 2.75V supply or a standard
MOSFET from a 5V supply. The gate-to-source output
voltage is internally limited to approximately 15V.
Applications
•
•
•
•
•
The MIC5060 is protected against automotive load
dump, reversed battery, and inductive load spikes of
–20V.
Notebook Battery Safety Switches
UMPC and Web Tablet Battery Protection
Battery-Powered Computer Power Management
General MOSFET Switch Applications
Power Bus Switching
The driver’s overvoltage shutdown feature turns off the
external MOSFET at approximately 35V to protect the
load against power supply excursions.
The MIC5060 is available in a 3 mm x 3 mm VDFN
package.
Typical Application Circuit
3V “Sleep-Mode” Switch with a Logic-Level MOSFET
+3V to +4V
10μF
MIC5060
1
Control Input
ON
OFF
8
V+
NC
Input
NC
Sourc e
4 Gnd
6
NC
Gate 5
2
IRLZ24
Load
3
7
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 1
MIC5060
Functional Block Diagram
MIC5060
V+ (1)
Charge Pump
Gate (5)
15V
Source (3)
Input (2)
Ground (4)
DS20006615A-page 2
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ............................................................................................................................................ –20V to +40V
Input Voltage ........................................................................................................................................–20V to V+ + 0.3V
Source Voltage................................................................................................................................................ –20V to V+
Source Current......................................................................................................................................................+50 mA
Gate Voltage ............................................................................................................................................... –20V to +50V
Operating Ratings ‡
Supply Voltage ......................................................................................................................................... +2.75V to +30V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: TJ = TA = –40°C to +85°C unless otherwise specified. Note 1
Parameters
Supply Current
Logic Input Voltage
Threshold VIN
Logic Input Current
MIC5060
Gate Enhancement
VGATE – VSUPPLY
Zener Clamp
VGATE – VSOURCE
Symbol
IV+
Min.
—
Typ.
Max.
10
25
5.0
10
10
25
60
100
10
25
25
35
—
Units
Conditions
V+ = 30V
µA
V+ = 5V
V+ = 3V
0.8
2.75V ≤ V+ ≤
30V
TA = 25°C
VIN De-Asserted, Note 2
VIN Asserted, Note 2
VIN De-Asserted, Note 2
VIN Asserted, Note 2
VIN De-Asserted, Note 2
VIN Asserted, Note 2
VIH
—
VIL
2.0
—
—
2.75V ≤ V+ ≤
30V
IIN_L
–2.0
0
—
3.0V ≤ V+ ≤
30V
VIN low
IIN_H
—
1.0
2.0
8.0V ≤ V+ ≤
30V
VIN high
VG_EN
3.0
—
17
V
3.0V ≤ V+ ≤
30V
VIN Asserted
VOH
13
15
17
V
8.0V ≤ V+ ≤
30V
VIN Asserted
V
µA
2021 Microchip Technology Inc. and its subsidiaries
Digital Low Level
Digital High Level
DS20006615A-page 3
MIC5060
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: TJ = TA = –40°C to +85°C unless otherwise specified. Note 1
Parameters
Symbol
Gate Turn-on Time, tON
Note 3
Note 1:
2:
3:
Typ.
Max.
Units
—
2.5
8.0
ms
V+ = 4.5V
CL = 1000 pF
VIN switched on, measure time for VGATE to
reach V+ + 4V
—
90
140
µs
V+ = 12V
CL = 1000 pF
As above, measure time
for VGATE to reach V+ +
4V
—
6.0
30
µs
V+ = 4.5V
CL = 1000 pF
VIN switched on, measure time for VGATE to
reach 1V
—
6.0
30
µs
V+ = 12V
CL = 1000 pF
As above, measure time
for VGATE to reach 1V
35
37
41
V
—
—
tR
Gate Turn-off Time, tOFF
Note 3
Overvoltage Shutdown
Threshold
Min.
tF
OVSHDN
Conditions
Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C. Typical
values are characterized at 25°C and represent the most likely parametric norm.
“Asserted” refers to a logic high on the MIC5060.
Test conditions reflect worst-case high-side driver performance. Low-side and bootstrapped topologies are
significantly faster - see Applications Information.
TEMPERATURE SPECIFICATIONS
Parameters
Symbol
Min.
Typ.
Max.
Units
Conditions
TS
–65
—
+150
°C
—
Temperature Ranges
Storage Temperature Range
Junction Temperature
TJ
—
—
+150
°C
Note 1
Ambient Temperature
TJ
–40
—
+85
°C
—
Lead Temperature
—
—
—
+260
°C
Soldering, 10 sec.
JA
—
60
—
°C/W
Package Thermal Resistances
Thermal Resistance, VDFN-8
Note 1:
—
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
DS20006615A-page 4
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-1:
Voltage.
VGATE - VSOURCE vs. Supply
FIGURE 2-4:
High-Side Turn-On Time vs.
Gate Capacitance.
FIGURE 2-2:
Supply Current
(Output Asserted).
FIGURE 2-5:
High-Side Turn-On Time
Until Gate = Supply +4V.
FIGURE 2-3:
Supply Voltage.
FIGURE 2-6:
High-Side Turn-On Time
Until Gate = Supply +4V.
Gate Enhancement vs.
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 5
MIC5060
FIGURE 2-7:
Temperature.
High-Side Turn-On Time vs.
FIGURE 2-10:
High-Side Turn-Off Time
Until Gate = Supply +1V.
FIGURE 2-8:
High-Side Turn-On Time
Until Gate = Supply +10V.
FIGURE 2-11:
Current.
Charge Pump Output
FIGURE 2-9:
High-Side Turn-On Time
Until Gate = Supply +10V.
FIGURE 2-12:
Current.
Charge Pump Output
DS20006615A-page 6
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
FIGURE 2-13:
Low-Side Turn-On Time
Until Gate = Supply 4V.
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 7
MIC5060
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
Package Type
MIC5060
VDFN-8 (ML)
(Top View)
TABLE 3-1:
V+
1
8
NC
INPUT
2
7
NC
SOURCE
3
6
NC
GND
4
5
GATE
PIN FUNCTION TABLE
Pin Number
Pin Name
1
V+
2
INPUT
Turns on power MOSFET when taken above (or below) threshold (1.0V typical). Pin 2
requires ~ 1 µA to switch.
3
SOURCE
Connects to source lead of power MOSFET and is the return for the gate clamp zener.
Pin 3 can safely swing to –20V when turning off inductive loads.
4
GROUND Ground.
5
GATE
6, 7, 8
NC
DS20006615A-page 8
Description
Supply. Must be decoupled to isolate from large transients caused by the power
MOSFET drain. 10 µF is recommended close to pins 1 and 4.
Drives and clamps the gate of the power MOSFET.
Not internally connected.
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
4.0
APPLICATION INFORMATION
4.1
Functional Description
The internal functions of the MIC5060 is controlled via
a logic block (refer to the Functional Block Diagram)
connected to the control input (Pin 2). When the input
is off (low), all functions are turned off, and the gate of
the external power MOSFET is held low via two
N-Channel switches. This results in a very low standby
current, 15 µA typical, which is necessary to power an
internal bandgap.
When the input is driven to the “ON” state, the
N-Channel switches are turned off, the charge pump is
turned on, and the P-Channel switch between the
charge pump and the gate turns on, allowing the gate
of the power FET to be charged. The op amp and
internal zener form an active regulator which shuts off
the charge pump when the gate voltage is high enough.
The charge pump incorporates a 100 kHz oscillator
and on-chip pump capacitors capable of charging a
1000 pF load in 90 µs typical. In addition to providing
active regulation, the internal 15V zener is included to
prevent exceeding the VGS rating of the power
MOSFET at high supply voltages.
The MIC5060 device has been improved for greater
ruggedness and durability. All pins can withstand being
pulled 20V below ground without sustaining damage,
and the supply pin can withstand an overvoltage
transient of 60V for 1 second. An overvoltage shutdown
has also been included, which turns off the device
when the supply exceeds 35V.
4.2
Construction Hints
High current pulse circuits demand equipment and
assembly techniques that are more stringent than
normal, low current lab practices. The following are the
sources of pitfalls most often encountered during
prototyping: Supplies. Many bench power supplies
have poor transient response. Circuits that are being
pulse tested, or those that operate by pulse-width
modulation will produce strange results when used with
a supply that has poor ripple rejection, or a peaked
transient response. Always monitor the power supply
voltage that appears at the drain of a high side driver
(or the supply side of the load for a low side driver) with
an oscilloscope. It is not uncommon to find bench
power supplies in the 1 kW class that overshoot or
undershoot by as much as 50% when pulse loaded.
Not only will the load current and voltage
measurements be affected, but also it is possible to
over stress various components, especially electrolytic
capacitors, with possibly catastrophic results. A 10 µF
supply bypass capacitor at the chip is recommended.
Residual resistances: Resistances in circuit
connections may also cause confusing results. For
example, a circuit may employ a 50 mΩ power
2021 Microchip Technology Inc. and its subsidiaries
MOSFET for low voltage drop, but unless careful
construction techniques are used, one could easily add
50 mΩ to 100 mΩ resistance. Do not use a socket for
the MOSFET. If the MOSFET is a TO-220 type
package, make high current connections to the drain
tab. Wiring losses have a profound effect on
high-current circuits. A floating milliohmeter can identify
connections that are contributing excess drop under
load.
4.3
Low Voltage Testing
As the MIC5060 has relatively high output impedances,
a normal oscilloscope probe will load the device. This
is especially pronounced at low voltage operation. It is
recommended that a FET probe or unity gain buffer be
used for all testing.
4.4
Circuit Topologies
The MIC5060 is well suited for use with standard power
MOSFETs in both low- and high-side driver
configurations. In addition, the lowered supply voltage
requirements of these devices make them ideal for use
with logic level FETs in high side applications with a
supply voltage of 3V to 4V. (If higher supply voltages
[>4V] are used with logic level FETs, an external zener
clamp must be supplied to ensure that the maximum
VGS rating of the logic FET [10V] is not exceeded.) In
addition, a standard IGBT can be driven using these
devices.
Choice of one topology over another is usually based
on speed vs. safety. The fastest topology is the low side
driver, however, it is not usually considered as safe as
high side driving as it is easier to accidentally short a
load to ground than to VCC. The slowest, but safest
topology is the high side driver; with speed being
inversely proportional to supply voltage. It is the
preferred topology for most military and automotive
applications. Speed can be improved considerably by
bootstrapping from the supply.
All topologies implemented using these devices are
well suited to driving inductive loads, as either the gate
or the source pin can be pulled 20V below ground with
no effect.
External clamp diodes are unnecessary, except for the
case in which a transient may exceed the overvoltage
trip point.
DS20006615A-page 9
MIC5060
4.7
+3V to +4V
10μF
MIC5060
1
Control Input
ON
OFF
2
3
V+
NC
Input
NC
Sourc e
NC
7
6
Gate 5
IRLZ24
Load
4 Gnd
8
Bootstrapped High Side Driver
The turn-on time of a high side driver can be improved
to faster than 40 µs by bootstrapping the supply with
the MOSFET source. The Schottky barrier diode
prevents the supply pin from dropping more than
200 mV below the drain supply and improves turn-on
time. Since the supply current in the “off” state is only a
small leakage, the 100 nF bypass capacitor tends to
remain charged for several seconds after the MIC5060
is turned off. Faster speeds can be obtained at the
expense of supply voltage (the overvoltage shutdown
will turn the part off when the bootstrapping action pulls
the supply pin above 35V) by using a larger capacitor
at the junction of the two 1N4001 diodes. In a PWM
application (this circuit can be used for either PWM’ed
or continuously energized loads), the chip supply is
sustained at a higher potential than the system supply,
which improves switching time.
FIGURE 4-1:
3V Sleep-Mode Switch with
a Logic-Level MOSFET.
4.5
+2.75V to +30V
1N5817
High-Side Driver
1N4001 (2)
100nF
The high side topology shown in Figure 4-1 is an
implementation of a “sleep-mode” switch for a laptop or
notebook computer, which uses a logic level FET. A
standard power FET can easily be substituted when
supply voltages above 4V are required.
1μF
MIC5060
1
Control Input
ON
OFF
8
V+
NC
Input
NC
Sourc e
4 Gnd
6
NC
Gate 5
2
3
7
1RF540
10μF
ON
OFF
2
3
V+
NC
Input
NC
Source
NC
4 Gnd
FIGURE 4-2:
4.6
8
7
Load
MIC5060
1
Control Input
Load
+3V to +30V
6
Gate 5
Low-Side Driver.
Low-Side Driver
A key advantage of this topology, as previously
mentioned, is speed. The MOSFET gate is driven to
near supply immediately when the MIC5060 is turned
on. Typical circuits reach full enhancement in 50 µs or
less with a 15V supply.
DS20006615A-page 10
FIGURE 4-3:
Driver.
4.8
Bootstrapped High-Side
High-Side Driver with Current
Sense
Although no current sense function is included on the
MIC5060, a simple current sense function can be
realized via the addition of one more active component;
an LM301A op amp used as a comparator. The positive
rail of the op amp is tied to V+, and the negative rail is
tied to ground. This op amp was chosen as it can
withstand having input transients that swing below the
negative rail, and has common mode range almost to
the positive rail.
The inverting side of this comparator is tied to a voltage
divider, which sets the voltage to V+ – VTRIP. The non
inverting side is tied to the node between the drain of
the FET and the sense resistor. If the overcurrent trip
point is not exceeded, this node will always be pulled
above V+ – VTRIP, and the output of the comparator will
be high which feeds the control input of the MIC5060.
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
Once the overcurrent trip point has been reached, the
comparator will go low, which shuts off the MIC5060.
When the short is removed, feedback to the input pin
insures that the MIC5060 will turn back on. This output
can also be level shifted and sent to an I/O port of a
microcontroller for intelligent control.
On
ITRIP = VTRIP/RS
= 1.7A
VTRIP = R1/(R1+R2)
10μF
MIC5060
1
2
3
V+
NC
Input
NC
Source
NC
4 Gnd
8
RS
0.06
R1
1k
7
R4
6
1k
Gate 5
Load
Current Shunts (RS). Low valued resistors are
necessary for use at RS. Resistors are available with
values ranging from 1 mΩ to 50 mΩ, at 2W to 10W. If
a precise overcurrent trip point is not necessary, then a
non-precision resistor or even a measured PCB trace
can serve as RS. The major cause of drift in resistor
values with such resistors is temperature coefficient;
the designer should be aware that a linear, 500 ppm/°C
change will contribute as much as 10% shift in the
overcurrent trip point. If this is not acceptable, a power
resistor designed for current shunt service (drifts less
than 100 ppm/°C), or a Kelvin-sensed resistor may be
used.†
12V
LM301A
R2
120k
2.2k
FIGURE 4-4:
High-Side Driver with
Overcurrent Shutdown.
† Suppliers of Precision Power Resistors:
Dale Electronics, Inc., 2064 12th Ave., Columbus, NE
68601
(402) 565-3131
International Resistive Co., P.O. Box 1860, Boone,NC
28607-1860
(704) 264-8861
Isotek Corp., 566 Wilbur Ave., Swansea, MA 02777
(508) 673-2900
Kelvin, 14724 Ventura Blvd., Ste. 1003, Sherman
Oaks, CA 91403-3501
(818) 990-1192
RCD Components, Inc., 520 E. Industrial Pk. Dr.,
Manchester, NH 03103
(603) 669-0054
Ultronix, Inc., P.O. Box 1090, Grand Junction, CO
81502
(303) 242-0810
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 11
MIC5060
5.0
TYPICAL APPLICATIONS
5.1
Variable Supply Low-Side Driver
for Motor Speed Control
VCC = +5V to +30V
MIC5060
1
The internal regulation in the MIC5060 allows a steady
gate enhancement to be supplied while the MIC5060
supply varies from 5V to 30V, without damaging the
internal gate to source zener clamp. This allows the
speed of the DC motor shown to be varied by varying
the supply voltage.
2
ON
OFF
3
V+
NC
Input
NC
Source
NC
4 Gnd
8
M
7
6
Gate 5
IRF540
12V
12V
LM3905N
1
2
On
3
Trigger
VREF
Emit
R/C
Coll
4 Gnd
10μF
Logic
8
FIGURE 5-2:
6
V+ 5
5.3
Incandescent/Halogen Lamp
Driver
MIC5060
1
NC
Input
NC
Source
4 Gnd
6
NC
Gate 5
7
1k
FIGURE 5-1:
Control/Driver.
5.2
R1
1k
1000pF
0.01μF
R4
N
Load
3
RS
0.06
8
V+
2
R2
LM301A
120k
2.2k
DC Motor Speed
Solenoid Valve Driver
High power solenoid valves are used in many industrial
applications requiring the timed dispensing of
chemicals or gases. When the solenoid is activated,
the valve opens (or closes), releasing (or stopping) fluid
flow. A solenoid valve, like all inductive loads, has a
considerable “kickback” voltage when turned off, as
current cannot change instantaneously through an
inductor. In most applications, it is acceptable to allow
this voltage to momentarily turn the MOSFET back on
as a way of dissipating the inductor’s current. However,
if this occurs when driving a solenoid valve with a fast
switching speed, chemicals or gases may be
inadvertently be dispensed at the wrong time with
possibly disastrous consequences. Also, too large of a
kickback voltage (as is found in larger solenoids) can
damage the MIC5060 or the power FET by forcing the
Source node below ground (the MIC5060 can be driven
up to 20V below ground before this happens). A catch
diode has been included in this design to provide an
alternate route for the inductive kickback current to
flow. The 5 kΩ resistor in series with this diode has
been included to set the recovery time of the solenoid
valve.
DS20006615A-page 12
Solenoid Valve Driver.
7
The combination of an MIC5060 and a power FET
makes an effective driver for a standard incandescent
or halogen lamp load. Such loads often have high
inrush currents, as the resistance of a cold filament is
less than one-tenth as much as when it is hot. Power
MOSFETs are well suited to this application as they
have wider safe operating areas than do power bipolar
transistors. It is important to check the SOA curve on
the data sheet of the power FET to be used against the
estimated or measured inrush current of the lamp in
question prior to prototyping to prevent “explosive”
results.
24V
MIC5060
1
OFF
ON
2
3
V+
NC
Input
NC
Source
NC
4 Gnd
8
7
6
Gate 5
ASCO
8320A
Solenoid
FIGURE 5-3:
IRFZ40
1N4005
5k
Halogen Lamp Driver.
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
5.4
Relay Driver
5.6
Some power relay applications require the use of a
separate switch or drive control, such as in the case of
microprocessor control of banks of relays where a logic
level control signal is used, or for drive of relays with
high power requirements. The combination of an
MIC5060 and a power FET also provides an elegant
solution to power relay drive.
Simple DC-DC Converter
The simplest application for the MIC5060 is as a basic
one-chip DC-DC converter.
As the output (Gate) pin has relatively high impedance,
the output voltage shown will vary significantly with
applied load.
12V
12V
10μF
MIC5060
10μF
1
MIC5060
1
Control Input
2
ON
OFF
V+
NC
Input
NC
3
Source
4 Gnd
NC
Control Input
8
Input
NC
Source
4 Gnd
NC
3
6
Gate 5
NC
2
ON
OFF
7
V+
8
7
6
Gate 5
IRF540
IRF540
OSRAM
HLX64623
OSRAM
HLX64623
FIGURE 5-4:
5.5
FIGURE 5-6:
Relay Driver.
Motor Driver with Stall Shutdown
Tachometer feedback can be used to shut down a
motor driver circuit when a stall condition occurs. The
control switch is a 3-way type; the “START” position is
momentary and forces the driver ON. When released,
the switch returns to the “RUN” position, and the
tachometer’s output is used to hold the MIC5060 input
ON. If the motor slows down, the tach output is
reduced, and the MIC5060 switches OFF. Resistor “R”
sets the shutdown threshold.
12V
5.7
DC-DC Converter.
High-Side Driver with Load
Protection
Although the MIC5060 is reverse battery protected, the
load and power FET are not, in a typical high side
configuration. In the event of a reverse battery
condition, the internal body diode of the power FET will
be forward biased. This allows the reversed supply
access to the load.
The addition of a Schottky diode between the supply
and the FET eliminates this problem. The MBR2035CT
was chosen as it can withstand 20A continuous and
150A peak, and should survive the rigors of an
automotive environment. The two diodes are paralleled
to reduce switch loss (forward voltage drop).
10μF
MIC5060
1
Control Input
ON
OFF
2
3
V+
NC
Input
NC
Source
NC
4 Gnd
5V
8
7
6
Gate 5
10μF
MIC5060
IRF540
1
Guardian Electric
1725-1C-12D
2
3
V+
NC
Input
NC
Source
NC
4 Gnd
FIGURE 5-5:
Motor Stall Shutdown.
2021 Microchip Technology Inc. and its subsidiaries
FIGURE 5-7:
Protection.
8
7
6
Gate 5
VOUT = 12V
High-Side Driver with Load
DS20006615A-page 13
MIC5060
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
8-Lead VDFN*
XXX
XXXX
NNNY
Legend: XX...X
Y
YY
WW
NNN
e3
*
Example
MIC
5060
615Y
Product code or customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) symbol may not be to scale.
DS20006615A-page 14
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
8-Lead VDFN Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Very Thin Plastic Dual Flat, No Lead Package (JMA) - 3x3x0.9 mm Body [VDFN]
Micrel Legacy Package DFN33-8LD-PL-1
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
B
N
(DATUM A)
(DATUM B)
E
NOTE 1
2X
0.05 C
1
2X
2
TOP VIEW
0.05 C
0.10 C
C
SEATING
A
A1
PLANE
8X
0.08 C
SIDE VIEW
(A3)
0.10
C A B
D2
1
2
0.10
C A B
E2
K
L
N
8X b
e
BOTTOM VIEW
0.10
0.05
C A B
C
Microchip Technology Drawing C04-1021 A Sheet 1 of 2
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 15
MIC5060
8-Lead VDFN Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Very Thin Plastic Dual Flat, No Lead Package (JMA) - 3x3x0.9 mm Body [VDFN]
Micrel Legacy Package DFN33-8LD-PL-1
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
Number of Terminals
N
e
Pitch
A
Overall Height
Standoff
A1
Terminal Thickness
A3
Overall Length
D
Exposed Pad Length
D2
Overall Width
E
Exposed Pad Width
E2
b
Terminal Width
Terminal Length
L
Terminal-to-Exposed-Pad
K
MIN
0.80
0.00
2.25
1.50
0.20
0.35
0.20
MILLIMETERS
NOM
8
0.65 BSC
0.85
0.02
0.203 REF
3.00 BSC
2.30
3.00 BSC
1.55
0.25
0.40
-
MAX
0.90
0.05
2.35
1.60
0.30
0.45
-
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package is saw singulated
3. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-1021 A Sheet 1 of 2
DS20006615A-page 16
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
8-Lead VDFN Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Very Thin Plastic Dual Flat, No Lead Package (JMA) - 3x3x0.9 mm Body [VDFN]
Micrel Legacy Package DFN33-8LD-PL-1
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X2
EV
8
ØV
Y2
C
EV
G1
Y1
1
2
SILK SCREEN
X1
G2
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
Contact Pitch
E
Optional Center Pad Width
X2
Optional Center Pad Length
Y2
Contact Pad Spacing
C
Contact Pad Width (X8)
X1
Contact Pad Length (X8)
Y1
Contact Pad to Center Pad (X8)
G1
Contact Pad to Contact Pad (X6)
G2
Thermal Via Diameter
V
Thermal Via Pitch
EV
MIN
MILLIMETERS
NOM
0.65 BSC
MAX
2.35
1.60
2.90
0.30
0.85
0.23
0.35
0.30
1.00
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
2. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during
reflow process
Microchip Technology Drawing C04-3021 Rev A
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 17
MIC5060
NOTES:
DS20006615A-page 18
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
APPENDIX A:
REVISION HISTORY
Revision A (November 2021)
• Converted Micrel document MIC5060 to Microchip data sheet DS20006615A.
• Minor text changes throughout.
2021 Microchip Technology Inc. and its subsidiaries
DS20006615A-page 19
MIC5060
NOTES:
DS20006615A-page 20
2021 Microchip Technology Inc. and its subsidiaries
MIC5060
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
PART NO.
X
X
XX
Device
Junction
Temperature Range
Package
Media Type
Device:
MIC5060:
Temperature:
Y
=
–40°C to +85°C (RoHS Compliant)
Package:
ML
=
8-Lead VDFN
Media Type:
TR
Examples:
a) MIC5060YML-TR:
Ultra Small High-Side MOSFET Driver
= 5,000/Reel
2021 Microchip Technology Inc. and its subsidiaries
Note 1:
Ultra Small High-Side MOSFET
Driver, –40°C to +85°C Junction
Temperature Range, 8-Lead
VDFN, 5,000/Reel
Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
DS20006615A-page 21
MIC5060
NOTES:
DS20006615A-page 22
2021 Microchip Technology Inc. and its subsidiaries
Note the following details of the code protection feature on Microchip products:
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and
under normal conditions.
•
Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of
Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to
continuously improving the code protection features of our products.
This publication and the information herein may be used only
with Microchip products, including to design, test, and integrate
Microchip products with your application. Use of this information in any other manner violates these terms. Information
regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your
specifications. Contact your local Microchip sales office for
additional support or, obtain additional support at https://
www.microchip.com/en-us/support/design-help/client-supportservices.
THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS".
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION INCLUDING BUT NOT
LIMITED TO ANY IMPLIED WARRANTIES OF NONINFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A
PARTICULAR PURPOSE, OR WARRANTIES RELATED TO
ITS CONDITION, QUALITY, OR PERFORMANCE.
IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSEQUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY
KIND WHATSOEVER RELATED TO THE INFORMATION OR
ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS
BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES
ARE FORESEEABLE. TO THE FULLEST EXTENT
ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON
ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION
OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF
ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP
FOR THE INFORMATION.
Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to
defend, indemnify and hold harmless Microchip from any and
all damages, claims, suits, or expenses resulting from such
use. No licenses are conveyed, implicitly or otherwise, under
any Microchip intellectual property rights unless otherwise
stated.
Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud,
CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO,
JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus,
maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo,
MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower,
PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch,
SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash,
Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O,
Vectron, and XMEGA are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AgileSwitch, APT, ClockWorks, The Embedded Control Solutions
Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight
Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3,
Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, QuietWire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub,
TimePictra, TimeProvider, TrueTime, WinPath, and ZL are
registered trademarks of Microchip Technology Incorporated in the
U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky,
BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive,
CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net,
Dynamic Average Matching, DAM, ECAN, Espresso T1S,
EtherGREEN, GridTime, IdealBridge, In-Circuit Serial
Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip
Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView,
memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple
Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP,
SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI,
SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total
Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY,
ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks
of Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
The Adaptec logo, Frequency on Demand, Silicon Storage
Technology, Symmcom, and Trusted Time are registered
trademarks of Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany
II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in
other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2021, Microchip Technology Incorporated and its subsidiaries.
All Rights Reserved.
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2021 Microchip Technology Inc. and its subsidiaries
ISBN: 978-1-5224-9295-5
DS20006615A-page 23
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
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Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
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Tel: 905-695-1980
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DS20006615A-page 24
China - Xiamen
Tel: 86-592-2388138
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Fax: 44-118-921-5820
2021 Microchip Technology Inc. and its subsidiaries
09/14/21
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